Article comprising a &#34;ballistic&#34; heterojunction bipolar transistor

ABSTRACT

The disclosed heterojunction bipolar transistor, to be referred to as the &#34;coherent&#34; transistor (CT), is capable of providing gain above the conventionally defined cut-off frequencies f T  and f max . Substantially, mono-energetic (average energy Δ) carriers are injected in beam-like fashion into the base, with kT&lt;Δ&lt;hv opt , where k, T and h have their conventional meaning, and v opt  is the frequency of the lowest relevant optical phonon in the base of width W B . Exemplarily, W B  is about 100 nm, Δ is about 20 meV, the CT comprises Si 1-x  Ge x  or III/V material, with the base being doped n-type. The CT utilizes substantially collisionless minority carrier transport through the base, and is designed such that, at an operating temperature which typically is ≲77K, the variance of the average base transit time (Δτ B ) is much less than the base transit time τ B , typically less than 0.5 τ B , preferably about τ B  /5 or less. Transistors according to the invention typically will have an operating frequency in the range 100 GHz-1THz, and can be advantageously used in many areas of technology, e.g., high speed computing or communications.

FIELD OF THE INVENTION

This application pertains to heterojunction bipolar transistors (HBTs).

BACKGROUND OF THE INVENTION

Since the invention of the transistor in 1947, much effort has been directed towards extension of the device operating range towards higher and higher frequencies.

Conventionally, the cut-off frequency f_(T) (defined as the frequency at which the current gain β, i.e., the absolute value of the parameter h_(fe) .tbd.∂J_(c) /∂J_(B), is unity) is used as a figure of merit that is indicative of the high frequency capability of a transistor. See for instance, S. M. Sze, "Physics of Semiconductor Devices", 2nd Edition, John Wiley & Sons, 1981, Chapter 3, incorporated herein by reference. It is well known that β at high frequencies decreases at a value of 10 dB/decade.

Another parameter that can be used to characterize the high frequency capabilities of a (typically microwave) transistor is the unilateral (power) gain U. See S. M. Sze, op. cit., pp. 160-165. The frequency at which the unilateral gain is unity is the maximum oscillating frequency f_(max), which can, but need not, be larger than f_(T). Both f_(T) and f_(max) are conventionally determined by extrapolation of the measured roll-off in h_(fe) and U, respectively.

G. T. Wright, (see, for instance, Solid State Electronics, Vol. 22, p. 399, 1979) proposed extension of active transistor operation of frequencies beyond the conventional cutoff frequency f_(T). The proposal involved the utilization of transit time resonances that arise from carrier drift in the collector space charge region. The proposed model suggested for an ideal transistor (i.e., a transistor without any parasitic impedances) the possibility that |U| could exceed unity at frequencies above f_(max). However, it has now been shown (S. Tiwari, IEEE Electron Device Letter, Vol. 10, No. 12, p. 574, 1989) that the proposed utilization of transit time resonances in a conventional GaAs/AlGaAs HBT would require reductions of each of the base and collector resistances and of the collector capacitance by at least an order of magnitude from state of the art values. Clearly, the proposed mechanism is, at least for the foreseeable future, not likely to be embodied in a practical device. To the best of our knowledge, transit time resonances of the prior art type were not considered with regard to hot electron HBTs. N. Dagli, (Solid State Electronics, Vol. 33 (7), p. 831) proposed a hot electron unipolar transit time transistor.

HBTs with substantially collisionless base transport are known. See, for instance, U.S. Pat. No. 4,829,343. Herein free carrier (not necessarily electron) base transport is considered to be "ballistic" if the mean free path (Λ) of the carriers in the base material is 3/8W_(B), the base width. As those skilled in the art know, the mean free path can, at least in principle, be determined by transport measurements in a magnetic field.

The cut-off frequency of a prior art ballistic HBT cannot be less than (2πτ_(B))⁻¹, where τ_(B) is the average base transit time of the minority carriers. Therefore, prior art ballistic HBTs are typically designed to minimize τ_(B). This generally involves maximizing carrier velocity through choice of low effective mass minority carriers (almost invariably resulting in the choice of n-p-n III/V transistors), and through choice of a design that exhibits a relatively large value of the parameter Δ, the injection energy. It also typically involves minimization of the base width W_(B).

Although HBTs having f_(T) substantially above 100 GHz have recently been reported (see, for instance, Y. K. Chen, et al. IEEE Electron Dev. Lett., Vol. 10, No. 6, p. 267, 1989), it would clearly be highly desirable to have available transistors that can operate at even higher frequencies. This application discloses such a transistor. The novel device, to be referred to as the coherent transistor (CT), has utility in many fields, e.g., high speed computation or communications.

SUMMARY OF THE INVENTION

Broadly speaking, the invention is a novel HBT that can exhibit power gain (preferably also current gain) at frequencies above the conventionally defined f_(T) and f_(max).

More specifically, the invention typically is embodied in an article that comprises a HBT that compromises first, second and third semiconductor regions, to be referred to as emitter, base and collector, respectively. The article also comprises means for electrically contacting the emitter, base and collector, respectively. The base is intermediate the emitter and collector and has a width W_(B). The emitter and collector each comprises material of a first conductivity type, and the base comprises material of a second conductivity type. Associated with the transistor is a current gain β, a unilateral power gain U, and conventional cut-off frequencies f_(T) and f_(max). Significantly, the transistor is selected such that Δτ_(B) is less than about 0.5 τ_(B), where Δτ_(B) is the variance of τ_(B), and such that the absolute value of U is greater than unity at least at one frequency above f_(max) and f_(T).

Typically, in a transistor according to the invention, the minority carriers are injected into the base over a (typically relatively abrupt) barrier, with the average injection energy Δ of the carriers being selected such that kT<Δ<hν_(opt), where k is the Boltzmann constant, T is the absolute temperature of the transistor during operation, h is Planck's constant, and ν_(opt) is the frequency of the lowest optical phonon in the base material. In preferred embodiments, Δ3/83 kT. Since hν_(opt) is, exemplarily, about 59 meV in Si and about 38 meV in GaAs, it can be readily seen that typically T≲77K.

A significant aspect of the invention is substantially collimated (in the forward direction) injection of substantially mono-energetic minority carriers into the base, and substantially ballistic transport of these carriers through the base to the base/collector junction. This is expressed by the requirement that Δτ_(B) is much less than τ_(B) (preferably, Δτ_(B) 3/8τ_(B) /5) where τ_(B) is the average base transit time for the carriers, and Δτ_(B) is the variance of τ_(B). Operation of the transistor at cryogenic temperatures, together with the choice of injection energy less than the energy of any relevant optical phonon can result in a ballistic scattering length (herein equivalent to Λ) of about 100 nm or even more. Furthermore, Δτ_(B) typically is proportional to T, as those skilled in the art know. Thus, the condition that Δτ_(B) is substantially less than τ_(B) can, in general, be readily met by appropriate choice of operating temperature.

Since the injected carriers have average energy Δ, τ_(B) =W_(B) (2Δ/m)^(-1/2), where m is the effective minority carrier mass in the base and Δτ_(B) =(<τ_(B) ² >-<τ_(B) >²)^(1/2), where the brackets signify the ensemble average of the variable within the brackets. The quantities τ_(B) and Δτ_(B) thus are well defined and also determinable for any particular transistor according to the invention. For instance, for the typical case of a thermal distribution of carriers on the top of the barrier, it is known that (Δτ_(B) /τ_(B)) is approximately equal to (kT/2Δ).

A HTB that meets the fundamental requirement Δτ_(B) <<τ_(B) will herein be referred to as a "coherent" transistor (CT) since, in such a device, a minority carrier pulse experiences relatively little dispersion during its propagation through the base. We have discovered that a CT can exhibit (current and/or power) gain at frequencies above f_(T) and f_(max), thus making possible operation at previously unattainable frequencies.

As will be shown in more detail below, an ideal CT (neglecting extrinsic impedances and also neglecting a transit delay θ in the base/collector junction) has current gain β>1 in a set of resonant bands of frequencies centered at f_(n) =2πnf_(T) where n=1,2, . . . , and f_(T) =(2πτ_(B))⁻¹ is approximately equal to the usual cut-off frequency. The magnitude of the resonance peaks decreases with frequency as 2(2πf_(n) Δτ_(B))⁻². Thus, it is the dispersion of the minority carries during base transit rather than the average time of flight that determines the extended current gain. Taking into account extrinsic impedances and other effects that are unavoidably present in an actual CT, the above described properties are modified to some extent. For example, the positions of the resonant peaks in the current gain are no longer simple multiples of f_(T). However, the basic advantage of the CT, namely, the possibility of providing gain at a frequency above f_(T) and f_(max), is preserved.

BRIEF DESCRIPTION OF THE DRAWING

FIG. 1 schematically shows relevant aspects of the band structure of an exemplary CT;

FIG. 2 shows the square of the intrinsic current gain of an exemplary CT as a function of frequency;

FIG. 3 shows current gain vs. frequency for three different transistors, including an exemplary CT;

FIG. 4 is an equivalent circuit for an abrupt junction HBT;

FIG. 5 schematically depicts an exemplary CT; and

FIG. 6 shows β² and |U| of an exemplary CT as a function of frequency.

DETAILED DESCRIPTION OF SOME PREFERRED EMBODIMENTS

FIG. 1 schematically depicts the band diagram of an abrupt-junction HBT that can, assuming an appropriate choice of parameters, advantageously embody the invention. By an "abrupt-junction" HBT, we mean herein a HBT in which the width of the emitter/base junction "transition" region is small, typically no more than 0.1 W_(B), frequently only a few crystal layers. The "transition" region is the region in which the relevant band edge drops from the peak of the emitter/base energy barrier to the constant base value. As those skilled in the art will recognize, the exemplary band diagram corresponds to a conventionally biased n-p-n HBT. Numerals 11-13 designate emitter, base and collector, respectively. The base has width W_(B), voltage V_(BE) is applied between base and emitter, and a voltage-V_(BC) is applied between base and collector. Minority carriers (i.e., electrons in the instant case) are injected into the base over a (desirably abrupt) energy barrier of height Δ. An analogous band diagram can readily be drawn for a p-n-p HBT according to the invention.

FIG. 2 shows the square of the intrinsic common emitter current gain as a function of frequency (in units of ωτ_(B)), for Δ=5 kT, and Δ and W_(B) selected such that τ_(B) =1 ps. As can be seen, the gain peaks occur approximately at f_(n), their magnitude decreasing with frequency as 1/f_(n) ². It can be shown that, under the stated conditions, the maximum current gain of the nth peak (β_(n)) is approximately equal to

    2Δ.sup.2 /(nτkT).sup.2.

See also A. A. Grinberg, et al., Applied Physics Letters, Vol. 60, p. 2770, 1992 (incorporated herein by reference), for a discussion of high frequency current roll-off in a HBT with collisionless propagation of minority carriers across the base.

FIG. 3 shows intrinsic current gain vs. frequency, all curves including the effect of collector delay τ_(c) =1 ps. Curve 30 corresponds to the (unphysical) case of a transistor with zero base delay, 31 to a transistor with diffusive base delay τ_(D) =2 ps, and 32 to an analogous CT with Δ=10 kT and τ_(B) =2 ps. The figure clearly demonstrates the existence in the CT of large gain in the frequency range in which not only the diffusive transistor but even the transistor with no base delay at all, are completely damped.

We shall next include in our discussion the effects of (unavoidable) extrinsic impedances. FIG. 4 represents an appropriate equivalent circuit of an abrupt junction HBT, wherein dashed line 40 encloses the intrinsic portion of the transistor, and E, B and C refer to emitter, base and collector, respectively. The intrinsic parameters R_(E) and C_(E) are the differential resistance and capacitance of the emitter/base junction, respectively, C_(C) and g_(A) are the collector junction capacitance and the Early conductance, respectively, α_(B) and ξ_(c) are the base and collector transport factors, respectively, and R_(B) is the intrinsic base resistance. C_(CX) is the extrinsic collector capacitance, and R_(BX), R_(CX) and R_(EX) are the parasitic base, collector and emitter resistances.

Analysis of the equivalent circuit for the case of a CT reveals an unexpected result, namely, the desirability of a relatively large W_(B). Frequently, the coherency condition can still be met at temperatures below 77K for W_(B) =100 nm or even larger, and it will frequently be desirable to design a CT such that W_(B) is relatively large, possibly≧100 nm. Large W_(B) is typically desirable because it allows the minority carriers to acquire an optimum phase delay (typically>τ) at frequencies within the contemplated frequency range (e.g., 100 GHz-1 THz). Furthermore, relatively large W_(B) allows one to attain relatively low base resistances R_(B) and R_(BX). This is a significant advantage, as those skilled in the art will appreciate. The above expressed preference for relatively large W_(B) is to be compared to the general prior art teaching to minimize W_(B) in "ballistic" transistors.

The analysis of the equivalent circuit also indicates that 2πfC_(c) (R_(E) +R_(EX) +R_(CX) +R_(x) ^(eff)) desirably is less than 1, where R^(eff) =R_(CX) (R_(E) +R_(EX))/(R_(B) +R_(BX)). This result indicates that even for Λ>>W_(B), the upper limit of the frequency range in which the transistor can exhibit gain is limited by the parasitics.

As those skilled in the art will know, a phase delay is associated with the current transport through any bipolar transistor. The phase delay can be expressed as the sum of the injection phase delay φ and the drift delay θ in the base/collector junction, with φ=φ_(E) +φ_(B), where φ_(E) and φ_(B) are the total transit angles of emitter and base, respectively. It is a significant aspect of the invention that a CT will typically be designed such that φ≳θ, with φ_(B) ≅2πfτ_(B) ≳π for frequencies above f_(T) and f_(max). This implies design choices that are contrary to the prior art teachings. For instance, these conditions suggest rather large values of W_(B) (frequently ≳100 nm), relatively small values of Δ, and use of relatively large effective mass minority carriers. All of the above referred to phase angles can be determined for a given design. For instance, θ=W_(c) /v_(s), where W_(c) is the width of the collector depletion region, and v_(s) is the saturated velocity in that depletion region. The emitter phase angle φ_(E) is defined only in the limit φ_(E) <<π (typically φ_(E) ≲π/4), and in that limit is approximately equal to 2πfR_(e) C_(e).

FIG. 5 schematically shows relevant aspects of an exemplary CT, wherein numerals 50-56 refer, respectively, to the collector contact, collector, collector depletion region, base, emitter, emitter contact and base contact. Numeral 540 refers to the emitter/base space charge layer. The emitter stripe width L_(E), base width W_(B) and collector depletion layer width W_(C) are also indicated. The relevant characteristics of a CT as shown in FIG. 5 were determined from the equivalent circuit of FIG. 4, using the following parameter values: R_(E) =5Ω·μm, R_(B) =25Ω·μm, R_(BX) =25Ω·μm, R_(EX) =20Ω·μm, R_(CX) =20Ω·μm, C_(C) =0.5 fF/μm, C_(E) =10 fF/μm, and C_(CX) =1 fF/μm; these parameters are given per 1 μm of emitter stripe width Z and are based on the assumed dimensions W_(B) =0.1 μm, W_(C) =0.1 μm, L_(E) =0.5 μm, the injection energy Δ= 14.4 meV, and the base layer resistivity ρ_(B) =0.001Ω·cm. Furthermore, it was assumed that the device temperature is 4.2K. These parameters can substantially be obtained in, for instance, a p-n-p Si-Ge heterostructure with a wide gap p-type Si emitter, abruptly adjoining a narrow gap n-type Ge_(x) Si_(1-x) (x˜0.1) base. For a heavy hole mass m=0.5 m_(o), one gets V_(B) ˜10⁷ cm/s, where m_(o) is the free electron mass and v_(B) is hole velocity in the base.

FIG. 6 shows results of the numerical analysis. In particular, it shows the absolute values of current gain and unilateral power gain, both as a function of frequency. As can readily be seen, the conventional f_(T) of the exemplary transistor is about 100 GHz. The figure shows, however, that the transistor is active up to frequencies of about 2πf_(T). The analysis revealed that the current gain is largely damped away by the parasites (although a trace of the peak is clearly seen near fτ_(B) ˜1), and that the unilateral power gain U in the region between the two peaks in |U| is actually negative, indicating that the transistor is active and the real part of the output impedance z₂₂ ^(e) is less than zero in that frequency region.

EXAMPLE

An abrupt junction CT of design substantially as shown in FIG. 5 is made as follows: on a conventional single crystal Si substrate is grown by conventional MBE an epitaxial layer sequence that comprises a 200 nm thick n-type (10¹⁹ cm⁻³ B) collector layer, a 100 nm thick substantially undoped (≳10¹⁶ cm⁻³) collector depletion layer, a 100 nm thick p-type (10¹⁹ cm⁻³ As) Si_(1-x) Ge_(x) (x≈0.1) base layer, a 5 nm thick light p-type (≲10¹⁷ cm⁻³ As) Si emitter/base space charge layer, and a 200 nm thick n-type (10¹⁹ cm⁻³ B) emitter layer. The wafer is patterned by conventional lithography and etching to define a HBT, and emitter, base and collector contacts are provided, all as known in the art. The HBT is cooled to 4.2K and conventional measurements are carried out. The measurements show that the device is a CT, with β and U substantially as shown in FIG. 6. Measurements at 15K show little change in behavior. This temperature can readily be reached by means of a commercially available re-circulating He-refrigerator. 

We claim:
 1. An article comprising a heterojunction bipolar transistor comprising first, second and third semiconductor regions, to be referred to as emitter, base and collector, respectively, and further comprising means for electrically contacting said emitter, base and collector, respectively, the base being intermediate the emitter and collector and having a width W_(B), the emitter and collector each comprising semiconductor material of a first conductivity type, and the base comprising material of a second conductivity type that differs from the first conductivity type, associated with the transistor being a unilateral power gain (U), a common emitter current gain (β), conventional cut-off frequencies f_(max) and f_(T), a minority carrier average injection energy Δ and a minority carrier average ballistic base transit time τ_(B) ; and associated with the material of the base is an optical phonon frequency v_(opt) ;CHARACTERIZED IN THAT a) kT<Δ<hv_(opt), where T is the transistor absolute operating temperature, k is Boltzmann's constant, and h is Planck's constant; b) W_(B) is at least 100 nm; c) the transistor is an abrupt junction transistor selected such that, at temperature T, Δτ_(B) is less than about 0.5 τ_(B) ; where Δτ_(B) is the variance of τ_(B) ; and further is selected such that d) at temperature T, the absolute value of U is greater than unity at least at one frequency above f_(T).
 2. An article according to claim 1, wherein Δ is at least 3 kT, and wherein the first conductivity type is p-type conductivity.
 3. An article according to claim 1, wherein the base comprises material selected from the group consisting of Si_(x) Ge_(1-x) (x<1) and III/V compound semiconductors.
 4. An article according to claim 1, wherein the transistor furthermore is selected such that β is greater than unity at least at one frequency above f_(T).
 5. An article according to claim 1, wherein said frequency is in the range 100 GHz-1 THz.
 6. An article according to claim 1, comprising means for cooling the transistor to a temperature that is less than or equal to 77K.
 7. An article according to claim 6, comprising means for cooling the transistor to a temperature that is less than or equal to about 15K. 